document number: 94379 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-nov-09 1 phase control thyristors (stud version), 110 a 110rki...pbf, 111rki...pbf series vishay high power products features ? high current and high surge ratings ? hermetic ceramic housing ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 110 a to-209ac (to-94) major ratings and characteristics parameter test conditions values units i t(av) 110 a t c 90 c i t(rms) 172 a i tsm 50 hz 2080 60 hz 2180 i 2 t 50 hz 21.7 ka 2 s 60 hz 19.8 v drm /v rrm 400 to 1200 v t q typical 110 s t j - 40 to 140 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma 110rki 111rki 40 400 500 20 80 800 900 120 1200 1300
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94379 2 revision: 04-nov-09 110rki...pbf, 111rki...pbf series vishay high power products phase control thyristors (stud version), 110 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 110 a 90 c maximum rms on-state current i t(rms) dc at 83 c case temperature 172 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 2080 t = 8.3 ms 2180 t = 10 ms 100 % v rrm reapplied 1750 t = 8.3 ms 1830 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 21.7 ka 2 s t = 8.3 ms 19.8 t = 10 ms 100 % v rrm reapplied 15.3 t = 8.3 ms 14.0 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 217 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.82 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 1.02 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 2.16 m high level value of on-state slope resistance r t2 (i > x i t(av) ), t j = t j maximum 1.70 maximum on-state voltage v tm i pk = 350 a, t j = t j maximum, t p = 10 ms sine pulse 1.57 v maximum holding current i h t j = 25 c, anode supply 6 v resistive load 200 ma typical latching current i l 400 switching parameter symbol test conditions values units maximum non-repe titive rate of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 300 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1 s typical turn-off time t q i tm = 50 a, t j = t j maximum, di/dt = - 5 a/s v r = 50 v, dv/dt = 20 v/s, gate 0 v 25 110 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum rated v drm /v rrm applied 20 ma
document number: 94379 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-nov-09 3 110rki...pbf, 111rki...pbf series phase control thyristors (stud version), 110 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 12 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 3.0 maximum peak positi ve gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 10 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 180 - ma t j = 25 c 80 120 t j = 140 c 40 - dc gate voltage required to trigger v gt t j = - 40 c 2.5 - v t j = 25 c 1.6 2 t j = 140 c 1 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 6.0 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 140 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.27 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.1 mounting torque, 10 % non-lubricated threads 15.5 (137) n m (lbf in) lubricated threads 14 (120) approximate weight 130 g case style see dimensions - link at the end of datasheet to-209ac (to-94) r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.043 0.031 t j = t j maximum k/w 120 0.052 0.053 90 0.066 0.071 60 0.096 0.101 30 0.167 0.169
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94379 4 revision: 04-nov-09 110rki...pbf, 111rki...pbf series vishay high power products phase control thyristors (stud version), 110 a fig. 1 - current ratings ch aracteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics maximum allowa b le case temperature (c) average on- s tate current (a) 80 40 60 20 100 120 0 140 130 120 110 100 90 80 94379_01 30 60 90 120 180 ? conduction angle r thjc (dc) = 0.27 k/w maximum allowa b le case temperature (c) average on- s tate current (a) 20 40 100 60 140 120 80 160 180 0 70 80 90 100 110 120 140 130 94379_02 30 60 dc 90 120 180 conduction period ? r thjc (dc) = 0.27 k/w maximum average on- s tate power loss (w) average on- s tate current (a) 40 80 100 120 0 60 20 160 140 120 100 80 60 40 20 0 94379_03a rm s limit 180 120 90 60 30 ? conduction angle t j = 140 c maximum average on- s tate power loss (w) maximum allowa b le am b ient temperature (c) 20 60 40 80 100 120 140 0 160 140 120 100 80 60 40 20 0 94379_03b 2 k/w 4 k/w 5 k/w 1.5 k/w 1 k/w 0.8 k/w 0.6 k/w r th s a = 0.3 k/ w - r maximum average on- s tate power loss (w) maximum allowa b le am b ient temperature (c) 20 40 80 60 100 120 140 0 220 200 180 160 120 80 40 20 140 100 60 0 94379_04b 2 k/w 4 k/w 5 k/w 1.5 k/w 1 k/w 0.8 k/w 0.6 k/w r th s a = 0.3 k/w - r maximum average on- s tate power loss (w) average on- s tate current (a) 60 140 180 0 100 160 20 80 120 40 220 180 140 100 200 160 120 60 80 40 20 0 94379_04a dc 180 120 90 60 30 rm s limit t j = 140 c conduction period ?
document number: 94379 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-nov-09 5 110rki...pbf, 111rki...pbf series phase control thyristors (stud version), 110 a vishay high power products fig. 5 - maximum non-repetitive surge current fig. 6 - maximu m non-repetitive surge current fig. 7 - on-state volt age drop characteristics fig. 8 - thermal impedance z thjc characteristic peak half s ine wave on- s tate current (a) num b er of equal amplitu d e half cycle current pulses (n) 10 100 1 800 1000 1200 1800 1600 1400 2000 94379_05 at any rated load condition and with rated v rrm applied following s urge. initial t j = 140 c at 60 hz 0.0083 s at 50 hz 0.0100 s peak half s ine wave on- s tate current (a) pulse train duration (s) 0.1 10 1 0.01 500 1000 1500 2000 2500 94379_06 maximum non-repetitive s urge current ver s u s pul s e train duration. control of conduction may not be maintained. initial t j = 140 c no voltage reapplied rated v rrm reapplied instantaneous on- s tate current (a) instantaneous on- s tate voltage (v) 012345 1 100 10 10 000 1000 94379_07 t j = 140 c t j = 25 c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 s quare wave pulse duration (s) z thjc - transient thermal impe d ance (k/w) 94379_08 s teady s tate value r thjc = 0.27 k/w (dc operation)
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94379 6 revision: 04-nov-09 110rki...pbf, 111rki...pbf series vishay high power products phase control thyristors (stud version), 110 a fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 94379_09 instantaneous g ate current (a) instantaneous g ate voltage (v) 0.01 0.1 1 10 1000 100 (1) p g m = 12 w, t p = 5 m s (2) p g m = 30 w, t p = 2 m s (3) p g m = 60 w, t p = 1 m s (4) p g m = 200 w, t p = 300 s rectangular gate pul s e (a) recommended load line for rated di/dt: 20 v, 30 , t r 0.5 s , t p 6 s (b) recommended load line for 30 % rated di/dt: 15 v, 40 , t r 1 s , t p 6 s (b) (a) t j = 25 c t j = 140 c t j = 40 c v g d i g d (1) (2) (3) (4) fre q uency limited by p g (av) device code 5 13 24 11 0 rki 120 pbf 1 -i t(av) rated average output current (rounded/10) 3 - thyristor 4 - voltage code x 10 = v rrm (see voltage ratings table) 5 - none = standard production pbf = lead (pb)-free 2 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) links to related documents dimensions www.vishay.com/doc?95003
document number: 95363 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 25-sep-08 1 to-209ac (to-94) for 1 10rki and 111rki series outline dimensions vishay semiconductors dimensions in millimeters (inches) note ? for metric device: m 12 x 1.75 contact factory fast-on terminals c.s. 0.4 mm 2 white shrink red shrink red cathode red silicon rubber ? 4.3 (0.17) 10 (0.39) max. (0.0006 s.i.) ceramic housing ? 8.5 (0.33) 16.5 (0.65) max. ? 22.5 (0.88) max. c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.6 (0.10) max. 29.5 (1.16) max. 1/2"-20unf-2a sw 27 9.5 (0.37 ) min. white gate amp. 280000-1 ref-250 20 (0.79) min. 24 (0.94) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 55 (2.16) min. 215 10 (8.46 0.39)
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